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NAND02G-B2C 데이터시트(PDF) 47 Page - STMicroelectronics

부품명 NAND02G-B2C
상세설명  1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF  62 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND02G-B2C 데이터시트(HTML) 47 Page - STMicroelectronics

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NAND01G-B2B, NAND02G-B2C
DC And AC parameters
47/62
Figure 19.
Command Latch AC waveforms
1.
The time to Ready depends on the value of the pull-up resistor tied to the Ready/Busy pin. See Figure 31, Figure 32 and
Figure 33.
2.
tWHWH is the time from W rising edge during the final address cycle to W rising edge during the first data cycle.
3.
During a Program/Erase Enable Operation, tWW is the delay from WP high to W High.
During a Program/Erase Disable Operation, tWW is the delay from WP Low to W High.
4.
ES = Electronic Signature.
ai13105
CL
E
W
AL
I/O
tCLHWH
tELWH
tWHCLL
tWHEH
tWLWH
tALLWH
tWHALH
Command
tDVWH
tWHDX
(CL Setup time)
(CL Hold time)
(Data Setup time)
(Data Hold time)
(ALSetup time)
(AL Hold time)
H(E Setup time)
(E Hold time)



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