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UPD16670 데이터시트(PDF) 23 Page - Renesas Technology Corp

부품명 UPD16670
상세설명  MOS INTEGRATED CIRCUIT
PDF  26 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPD16670 데이터시트(HTML) 23 Page - Renesas Technology Corp

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Data Sheet S10297EJ1V0DS00
21
µµµµPD16670
Electrical characteristics (Unless otherwise specified, TA = –40 to +85
°°°°C, VSS = 0 V, VDD = 2.7 to 3.6 V)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
High-level input voltage 1
VIH1
SCK,STB,DATA,/RESET,/LCDOFF
0.8 VDD
VDD
V
Low-level input voltage 1
VIL1
SCK,STB,DATA,/RESET,/LCDOFF
0
0.2 VDD
V
High-level input voltage 2
VIH2
TEST,OSCIN
0.7 VDD
VDD
V
Low-level input voltage 2
VIL2
TEST,OSCIN
0
0.3 VDD
V
SCK,STB,DATA,/RESET,/LCDOFF,
OSCIN
1
µA
High-level input current
IIH
TEST
3
15
75
µA
SCK,STB,DATA,TEST,OSCIN
– 1
µA
Low-level input current
IIL
/RESET,/LCDOFF
–3
– 15
– 75
µA
High-level output voltage
VOH
TDATA,IOH = –100
µA
0.8 VDD
VDD
V
Low-level output voltage
VOL
TDATA,IOL = 100
µAVSS
0.2 VDD
V
Common output ON resistance
RCOM
COM1 to COM33, IIOI = 50
µA15
k
Ω
Segment output ON resistance
RSEG
SEG1 to SEG60 , IIOI = 50
µA30
k
Ω
Current consumption
(Normal mode)
IDD1
VDD = 3 V, fOSC = 350 kHz,
4-fold voltage mode, no load
200
300
µA
Current consumption
(Standby mode)
IDD2
VDD = 3 V, no load
100
µA
Driver voltage (boost voltage)
VLCD
No load
3.5 VDD
4.0 VDD
V



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