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NAND04GA3C2A 데이터시트(PDF) 26 Page - STMicroelectronics

부품명 NAND04GA3C2A
상세설명  4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
PDF  51 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND04GA3C2A 데이터시트(HTML) 26 Page - STMicroelectronics

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6 Device operations
NAND04GA3C2A, NAND04GW3C2A
26/51
6.11
Read Electronic Signature
The device contains a Manufacturer Code and Device Code. To read these codes three steps
are required:
1.
One Bus Write cycle to issue the Read Electronic Signature command (90h)
2.
One Bus Write cycle to input the address (00h)
3.
Four Bus Read Cycles to sequentially output the data (as shown in Table 10: Electronic
Signature).
Table 9.
Status Register Bits
Bit
Name
Logic Level
Definition
SR7
Write Protection
'1'
Not Protected
'0'
Protected
SR6(1)
Program/ Erase/ Read
Controller
'1'
P/E/R C inactive, device ready
'0'
P/E/R C active, device busy
Cache Ready/Busy
'1'
Cache Register ready (Cache Read only)
'0'
Cache Register busy (Cache Read only)
SR5
Program/ Erase/ Read
Controller(2)
'1'
P/E/R C inactive
'0'
P/E/R C active
SR4, SR3,
SR2, SR1
Reserved
Don’t Care
SR0(1)
Generic Error
‘1’
Error – operation failed
‘0’
No Error – operation successful
1.
The SR6 bit and SR0 bit have a different meaning during Cache Read operations.
2.
Only valid for Cache Read operations, for other operations it is same as SR6.
Table 10.
Electronic Signature
Part Number
Byte/Word 1
Byte/Word 2
Byte 3
(see Table 11)
Byte 4
(see Table 12)
Manufacturer
Code
Device code
NAND04GA3C2A
20h
DCh
84h
25h
NAND04GW3C2A
20h
DCh
84h



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