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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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NAND04GA3C2A 데이터시트(PDF) 37 Page - STMicroelectronics |
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NAND04GA3C2A 데이터시트(HTML) 37 Page - STMicroelectronics |
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37 / 51 page  NAND04GA3C2A, NAND04GW3C2A 12 DC and AC parameters 37/51 Table 19. AC Characteristics for Command, Address, Data Input, VDDQ 3V Devices (1) Symbol Alt. Symbol Parameter 3V I/O Unit tALLWH tALS Address Latch Low to Write Enable High AL Setup time Min 40 ns tALHWH Address Latch High to Write Enable High tCLHWH tCLS Command Latch High to Write Enable High CL Setup time Min 20 ns tCLLWH Command Latch Low to Write Enable High tDVWH tDS Data Valid to Write Enable High Data Setup time Min 20 ns tELWH tCS Chip Enable Low to Write Enable High E Setup time Min 30 ns tWHALH tALH Write Enable High to Address Latch High AL Hold time Min 15 ns tWHALL Write Enable High to Address Latch Low tWHCLH tCLH Write Enable High to Command Latch High CL hold time Min 10 ns tWHCLL Write Enable High to Command Latch Low tWHDX tDH Write Enable High to Data Transition Data Hold time Min 15 ns tWHEH tCH Write Enable High to Chip Enable High E Hold time Min 10 ns tWHWL tWH Write Enable High to Write Enable Low W High Hold time Min 20 ns tWLWH tWP Write Enable Low to Write Enable High W Pulse Width Min 40 ns tWLWL tWC Write Enable Low to Write Enable Low Write Cycle time Min 60 ns 1. AC Characteristics for VDDQ 1.8V devices are still to be determined. |
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