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NAND04GA3C2A 데이터시트(PDF) 34 Page - STMicroelectronics

부품명 NAND04GA3C2A
상세설명  4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
PDF  51 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND04GA3C2A 데이터시트(HTML) 34 Page - STMicroelectronics

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11 Maximum rating
NAND04GA3C2A, NAND04GW3C2A
34/51
11
Maximum rating
Stressing the device above the ratings listed in Table 15: Absolute Maximum Ratings, may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 15.
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
Min
Max
TBIAS
Temperature Under Bias
– 50
125
°C
TSTG
Storage Temperature
– 65
150
°C
VIO
(1)
Input or Output Voltage
1.8V, VDDQ devices
– 0.6
2.7
V
3 V, VDDQ devices
– 0.6
4.6
V
VDD
Supply Voltage
– 0.6
4.6
V
1.
Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may
overshoot to VDD + 2V for less than 20ns during transitions on I/O pins.



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