NAND04GA3C2A datasheet(35/51 Pages) STMICROELECTRONICS

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NAND04GA3C2A, NAND04GW3C2A

12 DC and AC parameters

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DC and AC parameters

This section summarizes the operating and measurement conditions, and the DC and AC

characteristics of the device. The parameters in the DC and AC characteristics Tables that

follow, are derived from tests performed under the Measurement Conditions summarized in

Table 16: Operating and AC Measurement Conditions. Designers should check that the

operating conditions in their circuit match the measurement conditions when relying on the

quoted parameters.

The DC and AC characteristics for VDDQ 1.8V devices are not yet available.

Table 16.

Operating and AC Measurement Conditions

Parameter

NAND04GA3C2A,

NAND04GW3C2A

Units

Min

Max

Supply Voltage (VDD)

1.8V, VDDQ devices

1.7

1.95

3V, VDDQ devices

2.7

3.6

Ambient Temperature (TA)

Grade 1

°C

Grade 6

–40

°C

Load Capacitance (CL) (1 TTL GATE and CL)

1.8V VDDQ devices

3V, VDDQ devices (2.7 - 3.6V)

Input Pulses Voltages

1.8V, VDDQ devices

0VDD

3V, VDDQ devices

0.4

2.4

Input and Output Timing Ref. Voltages

1.8V, VDDQ devices

0.9

3V, VDDQ devices

1.5

Output Circuit Resistor Rref

8.35

Ω

Input Rise and Fall Times

Table 17.

Capacitance(1)

Symbol

Parameter

Test Condition

Typ

Max

Unit

CIN

Input Capacitance

VIN = 0V

CI/O

Input/Output Capacitance

VIL = 0V

TA = 25°C, f = 1 MHz. CIN and CI/O are not 100% tested.

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