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AM29BDS640G 데이터시트(PDF) 53 Page - Advanced Micro Devices

부품명 AM29BDS640G
상세설명  64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  77 Pages
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29BDS640G 데이터시트(HTML) 53 Page - Advanced Micro Devices

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May 9, 2006 25903C2
Am29BDS640G
51
Data
Sheet
AC Characteristics
Notes:
1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed
from two cycles to seven cycles. Clock is set for active rising edge.
2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY.
3. The device is in synchronous mode.
4. In the Burst Mode Configuration Register, A17 = 1.
Figure 13. Synchronous Burst Mode Read
Note: Figure assumes 7 wait states for initial access, 54 MHz clock, and automatic detect synchronous read. D0–D7 in
data waveform indicate the order of data within a given 8-word address range, from lowest to highest. Data will wrap
around within the 8 words non-stop unless the RESET# is asserted low, or AVD# latches in another address. Starting
address in figure is the 7th address in range (A6). See “Requirements for Synchronous (Burst) Read Operation”. The
Set Configuration Register command sequence has been written with A18=1; device will output RDY with valid data.
Figure 14. 8-word Linear Burst with Wrap Around
Da
Da + 1
Da + n
OE#
DQ15-DQ0
A21-A0
Aa
AVD#
RDY
CLK
CE#
tCAS
tAAS
tAVC
tAVD
tAAH
tOE
tRACC
tOEZ
tCEZ
tIACC
tBDH
7 cycles for initial access shown.
Hi-Z
Hi-Z
Hi-Z
12
3
4
56
7
tRDYS
tBACC
tACC
D6
D7
OE#
DQ15-DQ0
A21-A0
Aa
AVD#
RDY
CLK
CE#
tCES
tACS
tAVDS
tAVD
tACH
tOE
tIACC
tBDH
D0
D1
D5
D6
7 cycles for initial access shown.
18.5 ns typ. (54 MHz)
Hi-Z
tRACC
1
2
3
456
7
tRDYS
tBACC
tACC



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