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MBM29PL32TM90 데이터시트(PDF) 42 Page - SPANSION

부품명 MBM29PL32TM90
상세설명  FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash
PDF  68 Pages
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MBM29PL32TM/BM90/10
42
s ERASE AND PROGRAMMING PERFORMANCE
s TSOP (1) PIN CAPACITANCE
Notes :
• Test conditions TA = +25°C, f = 1.0 MHz
• DQ15/A-1 pin capacitance is stipulated by output capacitance.
s FBGA PIN CAPACITANCE
Notes :
• Test conditions TA = +25°C, f = 1.0 MHz
• DQ15/A-1 pin capacitance is stipulated by output capacitance.
Parameter
Limits
Unit
Remarks
Min
Typ
Max
Sector Erase Time
—
1
15
s
Excludes programming time prior to
erasure
Programming Time
—
100
3000
µs
Excludes system-level overhead
Effective Page Programming
Time
(Write Buffer Programming)
—
23.5
—
µs
Chip Programming Time
—
—
300
s
Absolute Maximum
Programming Time (16 words)
——
6
ms
Non programming within the same
page
Erase/Program Cycle
100,000
—
—
cycle
—
Parameter
Symbol
Test Setup
Value
Unit
Min
Typ
Max
Input Capacitance
CIN
VIN = 0
—
8
10
pF
Output Capacitance
COUT
VOUT = 0
—
8.5
12
pF
Control Pin Capacitance
CIN2
VIN = 0
—
8
10
pF
RESET pin and WP/ACC Pin
Capacitance
CIN3
VIN = 0
—
20
25
pF
Parameter
Symbol
Test Setup
Value
Unit
Min
Typ
Max
Input Capacitance
CIN
VIN = 0
—
8
10
pF
Output Capacitance
COUT
VOUT = 0
—
8.5
12
pF
Control Pin Capacitance
CIN2
VIN = 0
—
8
10
pF
RESET pin and WP/ACC Pin
Capacitance
CIN3
VIN = 0
—
15
20
pF



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