| 전자부품 데이터시트 검색엔진 |
|
LTC2414IGN 데이터시트(PDF) 30 Page - Linear Technology |
|
|
|||||||||||||||||||||||||||||
LTC2414IGN 데이터시트(HTML) 30 Page - Linear Technology |
|
30 / 48 page ![]() LTC2414/LTC2418 30 241418fa In addition to this gain error, the converter INL perfor- mance is degraded by the reference source impedance. When FO = LOW (internal oscillator and 60Hz notch), every 100 Ω of source resistance driving REF+ or REF– translates into about 1.34ppm additional INL error. When FO = HIGH (internal oscillator and 50Hz notch), every 100 Ωof source resistance driving REF+ or REF– translates into about 1.1ppm additional INL error. When FO is driven by an external oscillator with a frequency fEOSC, every 100Ω of source resistance driving REF+ or REF– translates into about 8.73 • 10–6 • fEOSCppm additional INL error. Figure 22 shows the typical INL error due to the source resistance driving the REF+ or REF– pins when large CREF values are used. The effect of the source resistance on the two reference pins is additive with respect to this INL error. In general, matching of source impedance for the REF+ and REF– pins does not help the gain or the INL error. The user is thus advised to minimize the combined source impedance driving the REF+ and REF– pins rather than to try to match it. The magnitude of the dynamic reference current depends upon the size of the very stable internal sampling capaci- tors and upon the accuracy of the converter sampling clock. The accuracy of the internal clock over the entire temperature and power supply range is typical better than 0.5%. Such a specification can also be easily achieved by an external clock. When relatively stable resistors (50ppm/ °C) are used for the external source impedance seen by REF+ and REF–, the expected drift of the dynamic current gain error will be insignificant (about 1% of its value over the entire temperature and voltage range). Even for the most stringent applications a onetime calibration operation may be sufficient. In addition to the reference sampling charge, the reference pins ESD protection diodes have a temperature dependent leakage current. This leakage current, nominally 1nA ( ±10nA max), results in a small gain error. A 100Ω source resistance will create a 0.05 µV typical and 0.5µV maxi- mum full-scale error. Output Data Rate When using its internal oscillator, the LTC2414/LTC2418 can produce up to 7.5 readings per second with a notch frequency of 60Hz (FO = LOW) and 6.25 readings per second with a notch frequency of 50Hz (FO = HIGH). The actual output data rate will depend upon the length of the sleep and data output phases which are controlled by the user and which can be made insignificantly short. When operated with an external conversion clock (FO connected to an external oscillator), the LTC2414/LTC2418 output data rate can be increased as desired up to that determined by the maximum fEOSC frequency of 2000kHz. The dura- tion of the conversion phase is 20510/fEOSC. If fEOSC = 153600Hz, the converter behaves as if the internal oscil- lator is used and the notch is set at 60Hz. There is no significant difference in the LTC2414/LTC2418 perfor- mance between these two operation modes. An increase in fEOSC over the nominal 153600Hz will translate into a proportional increase in the maximum output data rate. This substantial advantage is neverthe- less accompanied by three potential effects, which must be carefully considered. First, a change in fEOSC will result in a proportional change in the internal notch position and in a reduction of the converter differential mode rejection at the power line frequency. In many applications, the subsequent perfor- mance degradation can be substantially reduced by rely- ing upon the LTC2414/LTC2418’s exceptional common APPLICATIO S I FOR ATIO Figure 22. INL vs Differential Input Voltage (VIN = IN+ – IN–) and Reference Source Resistance (RSOURCE at REF+ and REF– for Large CREF Values (CREF ≥ 1µF) VINDIF/VREFDIF –0.5 –0.4–0.3–0.2–0.1 0 0.1 0.2 0.3 0.4 0.5 15 12 9 6 3 0 –3 –6 –9 –12 –15 VCC = 5V REF+ = 5V REF– = GND VINCM = 0.5 • (IN + + IN–) = 2.5V FO = GND CREF = 10µF TA = 25°C RSOURCE = 1000Ω RSOURCE = 500Ω RSOURCE = 100Ω 2414/18 F22 |
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |