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NAND512R3A2C 데이터시트(PDF) 46 Page - STMicroelectronics

부품명 NAND512R3A2C
상세설명  512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
PDF  51 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND512R3A2C 데이터시트(HTML) 46 Page - STMicroelectronics

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DC and AC parameters
NAND512-A2C
46/51
Figure 30.
Resistor value versus waveform timings for Ready/Busy signal
1.
T = 25°C.
10.2
Data Protection
The ST NAND device is designed to guarantee Data Protection during Power Transitions.
A VDD detection circuit disables all NAND operations, if VDD is below the VLKO threshold.
In the VDD range from VLKO to the lower limit of nominal range, the WP pin should be kept
low (VIL) to guarantee hardware protection during power transitions as shown in the below
figure.
Figure 31.
Data Protection
ai07565B
RP (KΩ)
12
3
4
100
300
200
1
2
3
1.7
0.85
30
1.7
1.7
1.7
1.7
tr
tf
ibusy
0
400
4
RP (KΩ)
12
3
4
100
300
200
1
2
3
2.4
1.2
0.8
0.6
100
200
300
400
3.6
3.6
3.6
3.6
0
400
4
VDD = 1.8V, CL = 30pF
VDD = 3.3V, CL = 100pF
60
90
120
0.57
0.43
Ai13188
VLKO
VDD
WP
Nominal Range
Locked
Locked



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