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NAND512R3A2C 데이터시트(PDF) 46 Page - STMicroelectronics |
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NAND512R3A2C 데이터시트(HTML) 46 Page - STMicroelectronics |
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46 / 51 page ![]() DC and AC parameters NAND512-A2C 46/51 Figure 30. Resistor value versus waveform timings for Ready/Busy signal 1. T = 25°C. 10.2 Data Protection The ST NAND device is designed to guarantee Data Protection during Power Transitions. A VDD detection circuit disables all NAND operations, if VDD is below the VLKO threshold. In the VDD range from VLKO to the lower limit of nominal range, the WP pin should be kept low (VIL) to guarantee hardware protection during power transitions as shown in the below figure. Figure 31. Data Protection ai07565B RP (KΩ) 12 3 4 100 300 200 1 2 3 1.7 0.85 30 1.7 1.7 1.7 1.7 tr tf ibusy 0 400 4 RP (KΩ) 12 3 4 100 300 200 1 2 3 2.4 1.2 0.8 0.6 100 200 300 400 3.6 3.6 3.6 3.6 0 400 4 VDD = 1.8V, CL = 30pF VDD = 3.3V, CL = 100pF 60 90 120 0.57 0.43 Ai13188 VLKO VDD WP Nominal Range Locked Locked |
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