전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

ST7LITE49M 데이터시트(PDF) 156 Page - STMicroelectronics

부품명 ST7LITE49M
상세설명  8-bit MCU with single voltage Flash memory data EEPROM, ADC, 8/12-bit timers, and I²C interface
PDF  188 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST7LITE49M 데이터시트(HTML) 156 Page - STMicroelectronics

Back Button ST7LITE49M Datasheet HTML 152Page - STMicroelectronics ST7LITE49M Datasheet HTML 153Page - STMicroelectronics ST7LITE49M Datasheet HTML 154Page - STMicroelectronics ST7LITE49M Datasheet HTML 155Page - STMicroelectronics ST7LITE49M Datasheet HTML 156Page - STMicroelectronics ST7LITE49M Datasheet HTML 157Page - STMicroelectronics ST7LITE49M Datasheet HTML 158Page - STMicroelectronics ST7LITE49M Datasheet HTML 159Page - STMicroelectronics ST7LITE49M Datasheet HTML 160Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 156 / 188 page
background image
Electrical characteristics
ST7LITE49M
156/188
13.7
Memory characteristics
TA = -40°C to 125 °C, unless otherwise specified.
Table 82.
RAM and hardware registers characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode(1)
1.
Minimum VDD supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in
hardware registers (only in Halt mode). Guaranteed by construction, not tested in production.
Halt mode (or Reset)
1.6
V
Table 83.
Flash program memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for Flash
Write/Erase
Refer to operating
range of VDD with TA,
Section 13.3.1 on
page 145
2.4
5.5
V
tprog
Programming time for 1~32
bytes(1)
1.
Up to 32 bytes can be programmed at a time.
TA=−40 to +125 °C
5
10
ms
Programming time for 4 kbytes
TA=+25 °C
0.64
1.28
s
tRET
Data retention(2)
2.
Data based on reliability test results and monitored in production.
TA=+55 °C
(3)
3.
The data retention time increases when the TA decreases.
20
years
NRW
Write erase cycles
TA=+25 °C
10K
cycles
IDD
Supply current(4)
4.
Guaranteed by Design. Not tested in production.
Read / Write / Erase
modes
fCPU = 8 MHz,
VDD = 5.5 V
2.6
mA
No Read/No Write
mode
100
µA
Power down mode /
Halt
00.1
µA
Table 84.
Data EEPROM memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for
EEPROM Write/Erase
Refer to operating range of
VDD with TA, Section 13.3.1 on
page 145
2.4
5.5
V
tprog
Programming time for
1~32 bytes
TA=−40 to +125°C
5
10
ms
tret
Data retention(1)
1.
Data based on reliability test results and monitored in production.
TA=+55°C
(2)
2.
The data retention time increases when the TA decreases.
20
years
NRW
Write erase cycles
TA=+25°C
300K cycles



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com