SEMICONDUCTOR

DIM2400ESS12-A000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

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ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In

extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.

Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect

device reliability.

Tcase = 25° C unless stated otherwise

Symbol

Parameter

Test Conditions

Max.

Units

Collector-emitter voltage

1200

V

Gate-emitter voltage

±20

V

Continuous collector current

2400

A

Peak collector current

4800

A

Max. transistor power dissipation

20830

kW

I

Diode I

900

kA

Isolation voltage – per module

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

2500

V