전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

DIM2400ESS12 데이터시트(PDF) 5 Page - Dynex Semiconductor

부품명 DIM2400ESS12
상세설명  Single Switch IGBT Module
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  DYNEX [Dynex Semiconductor]
홈페이지  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM2400ESS12 데이터시트(HTML) 5 Page - Dynex Semiconductor

  DIM2400ESS12 Datasheet HTML 1Page - Dynex Semiconductor DIM2400ESS12 Datasheet HTML 2Page - Dynex Semiconductor DIM2400ESS12 Datasheet HTML 3Page - Dynex Semiconductor DIM2400ESS12 Datasheet HTML 4Page - Dynex Semiconductor DIM2400ESS12 Datasheet HTML 5Page - Dynex Semiconductor DIM2400ESS12 Datasheet HTML 6Page - Dynex Semiconductor DIM2400ESS12 Datasheet HTML 7Page - Dynex Semiconductor DIM2400ESS12 Datasheet HTML 8Page - Dynex Semiconductor DIM2400ESS12 Datasheet HTML 9Page - Dynex Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 5 / 9 page
background image
SEMICONDUCTOR
DIM2400ESS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
5/9
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25° C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
td(off)
Turn-off delay time
IC = 2400A
-
1370
-
ns
tf
Fall time
VGE = ±15V
-
230
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
520
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 1
Ω
-
250
-
ns
tr
Rise time
L
∼ 50nH
-
230
-
ns
EON
Turn-on energy loss
-
180
-
mJ
Qg
Gate charge
-
26
-
µC
Qrr
Diode reverse recovery charge
IF = 2400A, VR = 600V,
-
310
-
µC
Irr
Diode reverse current
dlF/dt = 9500A/µs
-
1000
-
A
EREC
Diode reverse recovery energy
-
150
-
mJ
Tcase = 125° C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
td(off)
Turn-off delay time
IC = 2400A
-
1570
-
ns
tf
Fall time
VGE = ±15V
-
230
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
600
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 1
Ω
-
360
-
ns
tr
Rise time
L
∼ 50nH
-
290
-
ns
EON
Turn-on energy loss
-
200
-
mJ
Qrr
Diode reverse recovery charge
IF = 2400A, VR = 600V,
-
540
-
µC
Irr
Diode reverse current
dlF/dt = 8500A/µs
-
1260
-
A
EREC
Diode reverse recovery energy
-
260
-
mJ



Html Pages

1 2 3 4 5 6 7 8 9


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com