DIM2400ESS12 datasheet(4/9 Pages) DYNEX

4 / 9 page

SEMICONDUCTOR

DIM2400ESS12-A000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

4/9

www.dynexsemi.com

ELECTRICAL CHARACTERISTICS

Tcase = 25° C unless stated otherwise.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Ices

Collector cut-off current

VGE = 0V, VCE = VCES

VGE = 0V, VCE = VCES, Tcase = 125° C

Ices

Gate leakage current

VGE = ±20V, VCE = 0V

µA

VGE(TH)

Gate threshold voltage

IC = 80mA, VGE = VCE

4.5

5.5

6.5

VCE(sat)

Collector-emitter saturation voltage

VGE = 15V, IC = 2400A

2.2

2.8

VGE = 15V, IC = 2400A, Tcase = 125° C

2.6

3.3

Diode forward current

2400

IFM

Diode maximum forward current

tp = 1ms

4800

Diode forward voltage

IF = 2400A

2.1

2.4

IF = 2400A, Tcase = 125° C

2.1

2.4

Cies

Input capacitance

VCE = 25V, VGE = 0V, f = 1MHz

270

Module inductance

RINT

Internal resistance

0.09

Ω

SCData

Short circuit. Isc

Tj = 125° C,Vcc = 2500V,

16500

≤ 10µs,

VCE(max) = VCES - L*.di/dt

13500

IEC 60747-9

Note:

Measured at the power busbars and not the auxiliary terminals

*L is the circuit inductance + L

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