SEMICONDUCTOR

DIM2400ESS12-A000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

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THERMAL AND MECHANICAL RATINGS

Internal insulation material:

Baseplate material:

Copper

Creepage distance:

32mm

Clearance:

20mm

CTI (Critical Tracking Index):

175

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Thermal resistance – transistor

Continuous dissipation –

junction to case

-

-

6

° C/kW

Thermal resistance – diode

Continuous dissipation –

junction to case

-

-

13.3

° C/kW

Thermal resistance – case to heatsink

(per module)

Mounting torque 5Nm

(with mounting grease)

-

-

6

° C/kW

Junction temperature

Transistor

-

-

150

° C

Diode

-

-

125

° C

Storage temperature range

-

-40

-

125

° C

-

Screw torque

Mounting – M6

-

-

5

Nm

Electrical connections – M4

-

-

2

Nm

Electrical connections – M8

-

-

10

Nm