MCP6G01-ESLASHMS datasheet(2/38 Pages) MICROCHIP

2 / 38 page

MCP6G01/1R/1U/2/3/4

DS22004B-page 2

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

VDD –VSS ........................................................................7.0V

Current at Analog Input Pin (VIN) ......................................±2mA

Analog Input (VIN) †† ..................... VSS –1.0VtoVDD +1.0V

All other Inputs and Outputs........... VSS –0.3VtoVDD +0.3V

Output Short Circuit Current...................................continuous

Current at Output and Supply Pins

................................ ±30 mA

Storage Temperature.....................................-65°C to +150°C

Junction Temperature..................................................+150°C

ESD protection on all pins (HBM; MM)

................ ≥ 4 kV; 200V

† Notice: Stresses above those listed under “Absolute

Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated in the operational listings of this specification is not

implied. Exposure to maximum rating conditions for extended

periods may affect device reliability.

†† See Section 4.1.4 “Input Voltage and Current Limits”.

DC ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, G = +1 V/V,

VIN = (0.3V)/G, RL = 100 kΩ to VDD/2, GSEL = VDD/2, and CS is tied low.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Amplifier Inputs (VIN)

Input Offset Voltage

VOS

–4.5

±1.0

+4.5

G = +1

—

±1.0

—

G = +10, +50

Input Offset Voltage Drift

ΔVOS/ΔTA

—

±2

—

µV/°C

G = +1, TA = -40°C to +125°C

Power Supply Rejection Ratio

PSRR

—

G = +1 (Note 1)

Input Bias Current

—1

—

Input Bias Current at

—30—

TA = +85°C

Temperature

—

1000

5000

TA = +125°C

Input Impedance

ZIN

—1013||6

—

Ω||pF

Amplifier Gain

Nominal Gains

—

1 to 50

—

V/V

+1, +10 or +50

DC Gain Error G = +1

–0.3

—

+0.3

VOUT ≈ 0.3V to VDD − 0.3V

≥ +10

–1.0

—

+1.0

VOUT ≈ 0.3V to VDD − 0.3V

DC Gain Drift G = +1

ΔG/ΔTA

—±1—

ppm/°C

TA = -40°C to +125°C

≥ +10

ΔG/ΔTA

—±4—

ppm/°C

TA = -40°C to +125°C

Ladder Resistance (Note 1)

Ladder Resistance

RLAD

200

350

500

Ladder Resistance

across Temperature

ΔRLAD/ΔTA

—

–1800

—

ppm/°C

TA = -40°C to +125°C

Amplifier Output

DC Output Non-linearity G = +1

VONL

–0.2

—

+0.2

% of FSR VOUT = 0.3V to VDD –0.3V,

VDD =1.8V

VONL

–0.1

—

+0.1

% of FSR VOUT = 0.3V to VDD –0.3V,

VDD =5.5V

DC Output Non-linearity, G = +10, +50

VONL

–0.05

—

+0.05

% of FSR VOUT = 0.3V to VDD –0.3V

Maximum Output Voltage Swing

VOH, VOL

VSS+10

—

VDD–10

G = +1; 0.3V output overdrive

VOH, VOL

VSS+10

—

VDD–10

≥ +10; 0.5V output overdrive

Short Circuit Current

ISC

—±7—

VDD = 1.8V

ISC

—±20

—

VDD = 5.5V

Note 1:

RLAD (RF+RG in Figure 4-1) connects VSS, VOUT, and the inverting input of the internal amplifier. Thus, VSS is coupled

to the internal amplifier and the PSRR spec describes PSRR+ only. It is recommended that the VSS pin be tied directly

to ground to avoid noise problems.

IQ includes current in RLAD (typically 0.6 µA at VOUT = 0.3V), and excludes digital switching currents.

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