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TDA4VEN...Q1 데이터시트(PDF) 83 Page - Texas Instruments

부품명 TDA4VEN...Q1
상세설명  TDA4VEN, TDA4AEN Jacinto™ Processors
PDF  236 Pages
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제조업체  TI [Texas Instruments]
홈페이지  http://www.ti.com
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TDA4VEN...Q1 데이터시트(HTML) 83 Page - Texas Instruments

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T
overshoot
T
undershoot
T
period
Overshoot = 20% of nominal
IO supply voltage
Undershoot = 20% of nominal
IO supply voltage
A.
Tovershoot + Tundershoot < 20% of Tperiod
Figure 6-1. IO Transient Voltage Ranges
6.2 ESD Ratings for AEC - Q100 Qualified Devices in the AMW Package
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC - Q100-002(1)
±1000
V
Charged-device model (CDM), per AEC - Q100-011
Corner pins
(A1, A25, AE1, and
AE25)
±750
All other pins
±250
(1)
AEC - Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Power-On Hours (POH)
POWER ON HOURS (POH)(1) (2) (3)
JUNCTION TEMPERATURE RANGE (TJ)(4)
LIFETIME (POH)
–40°C to 105°C
100000
–40°C to 125°C
20000(5)
(1)
This information is provided solely for your convenience and does not extend or modify the
warranty provided under TI's standard terms and conditions for TI semiconductor products.
(2)
Unless specified in the table above, all voltage domains and operating conditions are supported in
the device at the noted temperatures.
(3)
POH is a function of voltage, temperature and time. Usage at higher voltages and temperatures will
result in a reduction in POH.
(4)
Either –40 to 105C or –40 to 125C profile should be chosen and applied through the lifetime of
the application. Mixing of these profiles for the purposes of extending temperature and/or POH may
result in increased reliability failure risk and is not recommended.
(5)
The –40 to 125C profile is defined as 20000 power on hours with a junction temperature as follows:
5%@–40°C, 65%@70°C, 20%@110°C, and 10%@125°C.
www.ti.com
TDA4VEN-Q1, TDA4AEN-Q1
SPRSP96A – MARCH 2024 – REVISED SEPTEMBER 2024
Copyright © 2024 Texas Instruments Incorporated
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