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Peng Jijun

13326967551 translated to English by Yevhen Stadnik 380972333363

4

DP950XB

Non-Isolated, Step-Down Quasi-Resonant LED Power Switch

Limit parameters (Note 1)

Parameter

Value

Unit

Drain Voltage

-0.3 to 500

V

HVDD Voltage

-0.3 to 650

V

CS,ROVP Voltage

-0.3 to 7

V

PDmax，

power dissipation @TA=50oC(SOP-7)

（Note 2）

0.6

W

ƟJA

Body thermal resistance - junction to ambient (SOP-7)

165

℃

/W

PDmax，

power dissipation @TA=50oC(DIP-7)

（Note 2）

0.9

W

ƟJA

Body thermal resistance - junction to ambient (DIP-7)

105

oC/W

Chip operating junction temperature

150

°C

Storage temperature

-65 to 150

°C

Solder temperature (soldering 10 seconds)

260

°C

ESD capabilitry (Electrostatic Discharge, release of stored static electricity)

3

kV

Recommended operating conditions

Parameter

Value

Unit

Operating Junction Temperature

-40 to 125

°C

Electrical parameters (ambient temperature is 25 ℃ unless otherwise specified)

Parameter

Description

Test conditions

Min.

Typ.

Max.

Unit

Power supply part (HVDD pin)

IVDD_st

Starting current

VDD<VDD_Op

300

700

uA

IVDD_Op

Working current

Fsw=7KHz

80

150

300

uA

HVDD_ON

HVDD Start voltage

10

11.5

13

V

HVDD_OFF

HVDD Shutdown voltage

5.8

6.6

7.5

V

Toff_min

Minimum shutdown time

(Note 3)

0.6

1.0

1.4

us

Ton_max

Maximum start time

(Note 3)

50

us

Toff_max

Maximum shutdown time

195

270

350

us

Current sampling part (CS pin)

TLEB

Current sampling leading

edge blanking time

(Note 3)

300

500

700

ns