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Peng Jijun

13326967551 translated to English by Yevhen Stadnik 380972333363

5

DP950XB

Non-Isolated, Step-Down Quasi-Resonant LED Power Switch

Vcs(max)

Peak current reference

590

600

610

mV

TD_OC

Shutdown Delay

(Note 3)

100

ns

Output overvoltage protection section (ROVP pin)

IROVP

ROVP Output Current

40

uA

Enable part (ROVP pin)

VROVP

ROVP Voltage

When V ROVP ＜150mV

the chip stops working

150

mV

Overheat protection part

TSD

Intelligent temperature

adjustment threshold

(Note 3)

145

°C

High voltage startup and IC power supply section (HVDD pin)

IHV

HV Charging Current

HVDD =20V

10

mA

IHV_leak

HV Leakage Current

10

40

60

uA

High voltage MOSFET part (Drain pin)

VBR

High Voltage MOSFET

Breakdown Voltage

500

V

DP9501C

18

Ω

DP9501AB

12

Ω

DP9501B

8.5

Ω

DP9502AB

5.8

Ω

DP9502B

4.8

Ω

DP9503AB

3.5

Ω

DP9503B

2.5

Ω

DP9504B

1.8

Ω

Note 1: Exceeding the "absolute maximum parameters" in the table may cause permanent damage to the device. Absolute maximum

parameters are stress ratings. The device may not work properly under conditions exceeding the recommended operating conditions

and stress, so it is not recommended to operate the device under these conditions. Excessive exposure to conditions higher than the

recommended maximum operating conditions may affect the reliability of the device.

Note 2: Maximum power dissipation PDmax = (T Jmax -TA)/Ɵ JA

Note 3: Parameters depend on actual design and functional testing is performed during mass production.

The maximum power dissipation will decrease as the

ambient temperature increases.