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M58BW016DB 데이터시트(PDF) 33 Page - STMicroelectronics |
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M58BW016DB 데이터시트(HTML) 33 Page - STMicroelectronics |
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33 / 69 page ![]() M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Command interface 33/69 Table 10. Program, erase times and program, erase endurance cycles(1) 1. TA = –40 to 125 °C, VDD = 2.7 V to 3.6 V, VDDQ = 2.4 V to VDD Parameters M58BW016 Unit Min Typ Max VPP =VDD VPP =12V VPP =VDD VPP =12V Parameter Block (64 Kb) Program 0.030 0.016 0.060 0.032 s Main Block (512 Kb) Program 0.23 0.13 0.46 0.26 s Parameter Block Erase 0.8 0.64 1.8 1.5 s Main Block Erase 1.5 0.9 3 1.8 s Program Suspend Latency time 310 µs Erase Suspend Latency time 10 30 µs Program/Erase cycles (per block) 100,000 cycles |
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