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M58BW016DB 데이터시트(PDF) 46 Page - STMicroelectronics

부품명 M58BW016DB
상세설명  16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
PDF  69 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58BW016DB 데이터시트(HTML) 46 Page - STMicroelectronics

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DC and AC parameters
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
46/69
Table 19.
Asynchronous Write and Latch Controlled Write AC characteristics
Symbol
Parameter
Test condition
M58BW016
Unit
70
80
tAVLL
Address Valid to Latch Enable Low
Min
0
0
ns
tAVWH
Address Valid to Write Enable High
E =VIL
Min
50
50
ns
tDVWH Data Input Valid to Write Enable High
E =VIL
Min
50
50
ns
tELLL
Chip Enable Low to Latch Enable Low
Min
0
0
ns
tELWL
Chip Enable Low to Write Enable Low
Min
0
0
ns
tLHAX
Latch Enable High to Address Transition
Min
5
5
ns
tLLLH
Latch Enable Low to Latch Enable High
Min
10
10
ns
tLLWH
latch Enable Low to Write Enable High
E =VIL
Min
50
50
ns
tQVVPL Output Valid to VPP Low
Min
0
0
ns
tVPHWH VPP High to Write Enable High
Min
0
0
ns
tWHAX Write Enable High to Address Transition
E =VIL
Min
0
0
ns
tWHDX Write Enable High to Input Transition
E =VIL
Min
0
0
ns
tWHEH Write Enable High to Chip Enable High
Min
0
0
ns
tWHGL Write Enable High to Output Enable Low
Min
150
150
ns
tWHQV Write Enable High to Output Valid
Min
175
175
ns
tWHWL Write Enable High to Write Enable Low
Min
20
20
ns
tWLWH Write Enable Low to Write Enable High
E =VIL
Min
60
60
ns
tQVPL
Output Valid to Reset/Power-down Low
Min
0
0
ns



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