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L9963E 데이터시트(PDF) 63 Page - STMicroelectronics

부품명 L9963E
상세설명  Automotive Multicell battery monitoring and balancing IC
PDF  184 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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L9963E 데이터시트(HTML) 63 Page - STMicroelectronics

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Figure 19. SPI timing diagram
All parameters are tested and guaranteed in the following conditions, unless otherwise noted:
9.6 V < VBAT < 64 V; -40 °C < Tambient < 105 °C
Table 51. SPI electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Tcll
Minimum time CLK = LOW
Application info
75
ns
Tclh
Minimum time CLK = HIGH
Application info
75
ns
Tpcld
Propagation delay (SCLK to data at SDO active)
Cload = 30 pF Valid for
GPIO9
50
ns
Tlead
CLK change L/H after NCS = low
Application info
75
ns
Tscld
SDI input setup time (CLK change H/L after SDI
data valid)
Application info
15
ns
Thcld
SDI input hold time (SDI data hold after CLK
change H/L)
Application info
15
ns
Tsclch
CLK low before NCS low
Application info
75
ns
Tlag
CLK low before NCS high
Application info
100
ns
Thclch
CLK high after NCS high
Application info
100
ns
Tonncs
NCS min high time
Application info
300
ns
Tpchdz
NCS L/H to SDO @ high impedance
Cload = 30 pF Valid for
GPIO9
75
ns
Tcsdv
NCS H/L to SDO active
Cload = 30 pF Valid for
GPIO9
90
ns
FCLK_SPI
CLK frequency (50% duty cycle)
Application info
0.5
5
MHz
TSPI_ERR
Tested by SCAN
5
ms
RPULLDOWN_SPIEN Pulldown resistance on SPIEN pin
50
150
kΩ
4.10
Internal Non Volatile Memory (NVM)
L9963E offers the possibility to store pack ID and other sensitive data in the internal NVM, up to NNVM_SIZE bit.
Three operations are available:
L9963E
Internal Non Volatile Memory (NVM)
DS13636 - Rev 12
page 63/184



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