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AT45DB321E 데이터시트(PDF) 44 Page - Renesas Technology Corp

부품명 AT45DB321E
상세설명  32-Mbit DataFlash (with Extra 1-Mbits), 2.3 V Minimum SPI Serial Flash Memory
PDF  80 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT45DB321E 데이터시트(HTML) 44 Page - Renesas Technology Corp

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DS-AT45DB321E-8784 Rev. N
Page 44
9/1/23
© 2023 Renesas Electronics
AT45DB321E Datasheet
10.2 Ultra-Deep Power-Down
The Ultra-Deep Power-Down mode allows the device to consume far less power compared to the standby and
Deep Power-Down modes by shutting down additional internal circuitry. Since almost all active circuitry is
shutdown in this mode to conserve power, the contents of the SRAM buffers cannot be maintained. Thus, any
data stored in the SRAM buffers are lost once the device enters the Ultra-Deep Power-Down mode.
When the device is in the Ultra-Deep Power-Down mode, all commands including the Status Register Read and
Resume from Deep Power-Down commands are ignored. Since all commands are ignored, the mode can be used
as an extra protection mechanism against program and erase operations.
Entering the Ultra-Deep Power-Down mode is accomplished by simply asserting the CS pin, clocking in the
opcode 79h, and then deasserting the CS pin. Any additional data clocked into the device after the opcode are
ignored. When the CS pin is deasserted, the device enters the Ultra-Deep Power-Down mode within the
maximum time of tEUDPD.
The complete opcode must be clocked in before the CS pin is deasserted, and the CS pin must be deasserted on
an even byte boundary (multiples of eight bits); otherwise, the device aborts the operation and return to the
standby mode once the CS pin is deasserted. Also, the device defaults to the standby mode after a power cycle.
The Ultra-Deep Power-Down command is ignored if an internally self-timed operation such as a program or erase
cycle is in progress. The Ultra-Deep Power-Down command must be reissued after the internally self-timed
operation has been completed in order for the device to enter the Ultra-Deep Power-Down mode.
Figure 18. Ultra-Deep Power-Down
SCK
CS
SI
SO
MSB
ICC
23
1
0
0
67
5
4
Opcode
High-impedance
Ultra-Deep Power-Down Mode Current
Active Current
Standby Mode Current
tEUDPD
1111001



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