AT45DB321E datasheet(74/80 Pages) RENESAS

74 / 80 page

DS-AT45DB321E-8784 Rev. N

Page 74

9/1/23

AT45DB321E Datasheet

Figure 51. Algorithm for Programming or Re-programming of the Entire Array Randomly

Note:

1. To preserve data integrity, each page of an DataFlash sector must be updated/rewritten at least once within every 50,000 cumulative

page erase and program operations

2. A page address pointer must be maintained to indicate which page is to be rewritten. The auto page rewrite command must use the

address specified by the page address pointer

3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications can choose to wait until 50,000 cumulative

page erase and program operations have accumulated before rewriting all pages of the sector. See application note AN-4 (“Using

Renesas Electronics’s Serial DataFlash”) for more details

START

Main Memory Page

to Buffer Transfer

(53h, 55h)

Increment Page

Address Pointer

(2)

Auto Page Rewrite

(2)

(58h, 59h)

END

Provide Address of

Page to Modify

If planning to modify multiple

bytes currently stored within

a page of the Flash array

Main Memory Page Program

through Buffer

(82h, 85h)

Buffer Write

(84h, 87h)

Buffer to Main

Memory Page Program

(83h, 86h)

AT45DB321E 데이터시트(PDF) 74 Page - Renesas Technology Corp