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AT45DB321E 데이터시트(PDF) 45 Page - Renesas Technology Corp

부품명 AT45DB321E
상세설명  32-Mbit DataFlash (with Extra 1-Mbits), 2.3 V Minimum SPI Serial Flash Memory
PDF  80 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT45DB321E 데이터시트(HTML) 45 Page - Renesas Technology Corp

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DS-AT45DB321E-8784 Rev. N
Page 45
9/1/23
© 2023 Renesas Electronics
AT45DB321E Datasheet
10.2.1
Exit Ultra-Deep Power-Down
To exit from the Ultra-Deep Power-Down mode, the CS pin must simply be pulsed by asserting the CS pin, waiting
the minimum necessary tCSLU time, and then deasserting the CS pin again. To facilitate simple software
development, a dummy byte opcode can also be entered while the CS pin is being pulsed just as in a normal
operation like the Program Suspend operation; the dummy byte opcode is simply ignored by the device in this
case. After the CS pin has been deasserted, the device exits from the Ultra-Deep Power-Down mode and return
to the standby mode within a maximum time of tXUDPD. If the CS pin is reasserted before the tXUDPD time has
elapsed in an attempt to start a new operation, then that operation is ignored and nothing is performed. The
system must wait for the device to return to the standby mode before normal command operations such as
Continuous Array Read can be resumed.
Since the contents of the SRAM buffers cannot be maintained while in the Ultra-Deep Power-Down mode, the
SRAM buffers contain undefined data when the device returns to the standby mode.
Figure 19. Exit Ultra-Deep Power-Down
CS
SO
ICC
High-impedance
Ultra-Deep Power-Down Mode Current
Active Current
Standby Mode Current
tXUDPD
tCSLU



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