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L6711 데이터시트(PDF) 40 Page - STMicroelectronics |
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L6711 데이터시트(HTML) 40 Page - STMicroelectronics |
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40 / 50 page ![]() Driver section L6711 40/50 Moreover, since the device has an exposed pad to better dissipate the power, also the thermal resistance between junction and ambient is important. Figure 16 shows the Switching Power for different kind of mosfets driven. Figure 20. Controller power dissipated (Quiescent + Switching; VCC = VCCDR = VBOOT = 12V) 0 500 1000 1500 2000 2500 3000 10 0 3 00 500 700 900 Sw it ch ing Frequency [k Hz] p er Phase Q G_HS=24nC Q G_LS=62nC Q G_HS=18nC Q G_LS=47nC Q G_HS=3 6nC Q G_LS=94nC Q G_HS=48 n C Q G_LS= 124nC Q G_HS=72nC Q G_LS=196nC 0 50 0 100 0 150 0 200 0 250 0 300 0 100 300 500 700 900 S w itc hing Freq uen cy [kH z] p er P hase Q G_HS= 24nC Q G_LS= 62n C Q G_HS= 18nC Q G_LS= 47n C Q G_HS= 36nC Q G_LS=9 4nC Q G_HS= 48n C Q G_L S=124n C Q G_HS= 72n C Q G_LS= 1 96nC RGATE = RGATE_MOSFET = 0 RGATE_HS = 2.2Ω; RGATE_LS = 3.3Ω; · RGATE_MOSFET = 1Ω |
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