RBO08-40M datasheet(7/14 Pages) STMICROELECTRONICS

부품명	RBO08-40M

상세설명	REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO

PDF	14 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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7 / 14 page

1E-3

1E-2

1E-1

1E+0

1E+1

0.1

0.2

0.5

1.0

Zth(j-c)/Rth(j-c)

tp (s)

Fig. 4 : Relative variation of thermal impedance

junction to case versus pulse duration.

0.1

1.0

10.0

20.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

V(V

)

Tj=25

°C

Tj=150

°C

IFM (A)

Fig. 5-1 : Peak forward voltage drop versus peak

forward current (typical values) - (TRANSIL T2).

V(V

)

0.1

1.0

10.0

20.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Tj=25

°C

Tj=150

°C

IFM (A)

Fig. 5-2 : Peak forward voltage drop versus peak

forward current (typical values) - (DIODE D1).

ORDERING INFORMATION

RBO

Reversed Battery &

Overvoltage protection

IF(AV) =8 A

Package :

M = PowerSO-10

G= D

2PAK

T = TO220AB

VCL = 40V

Fig. 6 : Relative variation of leakage current

versus junction temperature.

RBO08-40G / RBO08-40M / RBO08-40T

7/14

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