RBO08-40M datasheet(6/14 Pages) STMICROELECTRONICS

부품명	RBO08-40M

상세설명	REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO

PDF	14 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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6 / 14 page

100

0.1

0.2

0.5

1.0

2.0

5.0

10.0

tp(ms)

Pp (kW)

Transil T2

Diode D1

Fig. 1 : Peak pulse power versus exponential

pulse duration (Tj initial = 85

°C).

VCL (V)

0.1

0.2

0.5

1.0

2.0

5.0 10.0 20.0

50.0 100.0

tp = 20 s

tp = 1ms

Ipp(A)

Fig. 2-2 : Clamping voltage versus peak pulse

current (Tj initial = 85

°C).

Exponential waveform tp = 1 ms and tp = 20

µs

(TRANSIL T1).

0.1

0.2

0.5

1.0

5.0

10.0 20.0

50.0

VCL (V)

tp = 40ms

tp = 1ms

2.0

Ipp(A)

Fig. 2-1 : Clamping voltage versus peak pulse

current (Tj initial = 85

°C).

Exponential waveform tp = 40 ms and tp = 1 ms

(TRANSIL T2).

100

125

150

175

0.00

0.20

0.40

0.60

0.80

1.00

1.20

Tj initial (

°C)

Ppp[Tj]/Ppp[Tj initial=85

°C]

Fig. 3 : Relative variation of peak pulse power

versus junction temperature.

RBO08-40G / RBO08-40M / RBO08-40T

6/14

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