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RBO08-40M 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 RBO08-40M
상세설명  REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO
PDF  14 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

RBO08-40M 데이터시트(HTML) 3 Page - STMicroelectronics

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Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
VF13
IF =8 A
RBO08-40M/G
1.5
V
RBO08-40T
1.7
V
IF =8 A @ Tamb =25
°C
1.45
V
VF13
IF =4 A
RBO08-40M/G
1.3
V
RBO08-40T
1.35
V
IF =4 A @ Tamb =25
°C
1.2
V
VF13
IF = 1 A
1.1
V
IF =1 A @ Tamb =25
°C
1.0
V
IF = 1 A @ Tj = 85
°C
0.9
V
ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40
°C< Tamb <+ 85°C)
Symbol
Parameter
VRM31/VRM32
Stand-off voltage Transil T1 / Transil T2.
VBR31/VBR32
Breakdown voltage Transil T1 / Transil T2.
IR31/IR32
Leakage current Transil T1 / Transil T2.
VCL31/VCL32
Clamping voltage Transil T1 / Transil T2.
VF13
Forward voltage drop Diode D1.
IPP
Peak pulse current.
αT
Temperature coefficient of VBR.
C31/C32
Capacitance Transil T1 / Transil T2.
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
VBR 31
IR = 1 mA
22
35
V
VBR 31
IR = 1 mA, Tamb =25
°C24
32
V
IRM 31
VRM =20 V
50
µA
IRM 31
VRM =20 V, Tamb =25
°C
10
µA
VCL 31
IPP = 15A, Tjinitial = 25
°C
10/1000
µs40
V
α T
Temperature coefficient of VBR
910
-4/°C
C 31
F = 1MHz
VR = 0 V
1000
pF
ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40
°C< Tamb <+ 85°C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
VBR 32
IR = 1 mA
22
35
V
VBR 32
IR = 1 mA, Tamb =25
°C24
32
V
IRM 32
VRM =20 V
50
µA
IRM 32
VRM =20 V,Tamb =25
°C10
µA
VCL 32
IPP = 37.5 A
10/1000
µs40
V
α T
Temperature coefficient of VBR
8.5
10
-4/°C
C32
F = 1MHz
VR = 0 V
2000
pF
ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40
°C< Tamb <+ 85°C)
®
RBO08-40G / RBO08-40M / RBO08-40T
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