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M306V2EEFS 데이터시트(PDF) 256 Page - Renesas Technology Corp |
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M306V2EEFS 데이터시트(HTML) 256 Page - Renesas Technology Corp |
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256 / 271 page ![]() Rev.1.40 Oct 06, 2004 page 256 of 269 M306V2ME-XXXFP, M306V2EEFP Table 5.8.1 Memory expansion mode and microprocessor mode (no wait) (referenced to VCC = 5 V, VSS = 0 V at Ta = 25 oC, CM15 = “1” unless otherwise specified) Symbol Standard Measuring condition Max. Min. ParameterUnit td(BCLK-AD) Address output delay time35 ns th(BCLK-AD) Address output hold time (BCLK standard)4 ns th(BCLK-CS) Chip select output hold time (BCLK standard)4 ns td(BCLK-ALE) ALE signal output delay time35 ns th(BCLK-ALE) ALE signal output hold time – 4ns td(BCLK-RD) RD signal output delay time35 ns th(BCLK-RD) RD signal output hold time 0 ns td(BCLK-WR) WR signal output delay time 35 ns th(BCLK-WR) WR signal output hold time0 ns td(BCLK-DB) Data output delay time (BCLK standard)40 ns th(BCLK-DB) Data output hold time (BCLK standard)4 ns th(WR-DB) Data output hold time (WR standard)(Note 2)0 ns td(DB-WR) Data output delay time (WR standard)ns (Note 1) Note 1: Calculated according to the BCLK frequency as follows: td(DB – WR) = f(BCLK) 10 9 – 40 [ns] td(BCLK-CS) Chip select output delay time35 ns th(RD-AD) Address output hold time (RD standard)0 ns th(WR-AD) Address output hold time (WR standard) 0 ns 2: This is standard value shows the timing when the output is off, and does not show hold time of data bus. Hold time of data bus is different by capacitor volume and pull- up (pull-down) resistance value. Hold time of data bus is expressed in t = –CR ✕ ln (1 – VOL / VCC) by a circuit of the right figure. For example, when VOL = 0.2VCC, C = 30 pF, R = 1 k Ω, hold time of output “L” level is t = – 30 pF ✕ 1k Ω ✕ ln (1 – 0.2VCC / VCC) = 6.7 ns. DBi R C Figure 5.9.1 5.8 Switching Characteristics |
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