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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SH7708 데이터시트(PDF) 282 Page - Renesas Technology Corp |
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SH7708 데이터시트(HTML) 282 Page - Renesas Technology Corp |
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282 / 633 page  264 Single Write: The basic timing chart for write access is shown in figure 10.28. In a single write operation, following the Tr cycle in which ACTV command output is performed, a WRITA command that performs auto-precharge is issued in the Tc1 cycle. In the write cycle, the write data is output at the same time as the write command. For the write with auto-precharge command, precharging of the relevant bank is performed in synchronous DRAM after completion of the write command, and therefore no command can be issued for the same bank until precharging is completed. Consequently, in addition to the precharge wait cycle, Tpc, used in a read access, cycle Trwl is also added as a wait interval until precharging is started following the write command. Issuance of a new command for the same bank is postponed during this interval. The number of Trwl cycles can be specified by the TRWL bit in MCR. |
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