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MB91F467DA 데이터시트(PDF) 97 Page - fujitsu semiconductor |
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MB91F467DA 데이터시트(HTML) 97 Page - fujitsu semiconductor |
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97 / 140 page ![]() MB91460D Series DS07-16612-2E 97 6. FLASH memory program/erase characteristics 6.1. MB91F465DA (TA = 25oC, Vcc = 5.0V) *1: This value was converted from the results of evaluating the reliability of the technology (using Arrhenius equation to convert high temperature measurements into normalized value at 85oC) 6.2. MB91F467Dx (TA = 25oC, Vcc = 5.0V) *1: This value was converted from the results of evaluating the reliability of the technology (using Arrhenius equation to convert high temperature measurements into normalized value at 85oC) Parameter Value Unit Remarks Min Typ Max Sector erase time - 0.9 3.6 s Erasure programming time not included Chip erase time - n*0.9 n*3.6 s n is the number of Flash sector of the device Word (16-bit width) pro- gramming time - 23 370 μs System overhead time not in- cluded Programme/Erase cycle 10 000 cycle Flash data retention time 20 year *1 Parameter Value Unit Remarks Min Typ Max Sector erase time - 0.5 2.0 s Erasure programming time not included Chip erase time - n*0.5 n*2.0 s n is the number of Flash sector of the device Word (16 or 32-bit width) programming time - 6 100 μs System overhead time not in- cluded Programme/Erase cycle 10 000 cycle Flash data retention time 20 year *1 |
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