| 전자부품 데이터시트 검색엔진 |
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AT45DB021D 데이터시트(PDF) 53 Page - ATMEL Corporation |
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AT45DB021D 데이터시트(HTML) 53 Page - ATMEL Corporation |
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53 / 54 page ![]() 53 3638I–DFLASH–04/09 AT45DB021D 28. Revision History Revision Level – Release Date History A – June 2006 Initial release. B – February 2007 Removed RDY/BUSY pin references. C – August 2007 Changed tVCSL time to 1 ms. Changed IDP (Max) to 15 µA. Added Chip Erase time. Changed tRDPD time to 35 µs. Fixed the typographical error in the Block Architecture diagram. D – November 2007 Changed the tXFR and tCOMP times from 400 µs to 200 µs. Changed part number ordering code to reflect NiPdAu lead finish. - Changed AT45DB021D-MU to AT45DB021D-MH. - Changed AT45DB021D-SSU to AT45DB021D-SSH. - Changed AT45DB021D-SU to AT45DB021D-SH. Added lead finish details to Ordering Information table. Added Ordering Code Detail. E – February 2008 Fixed the typographical error, under Status Register Read, to indicate that bit 3 is a “0”. F – April 2008 Replaced 8M1-A MLF Package with 8MA1 UDFN Package. Added part number ordering code details for suffixes SL954/955. G – February 2009 Changed tDIS (Typ and Max) to 27 ns and 35 ns, respectively. H – March 2009 Changed Deep Power-Down Current values - Increased typical value from 5 µA to 15 µA. - Increased maximum value from 15 µA to 25 µA. I - April 2009 Updated Absolute Maximum Ratings Updated System Specifications |
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