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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM8S105C4B3 데이터시트(PDF) 79 Page - STMicroelectronics |
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STM8S105C4B3 데이터시트(HTML) 79 Page - STMicroelectronics |
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79 / 127 page  Unit Max Typ Min Conditions Parameter Symbol 1.0 -1.0 VDD = 5 V, TA = 25°C (3) Accuracy of HSI oscillator (factory calibrated) 2.0 -2.0 VDD = 5 V, 25 °C ≤ TA ≤ 85 °C 3.0 (3) -3.0 (3) 2.95 ≤ VDD≤ 5.5 V,-40 °C ≤ TA ≤ 125 °C µs 1.0 (2) HSI oscillator wakeup time including calibration tsu(HSI) µA 250 (3) 170 HSI oscillator power consumption IDD(HSI) (1) Refer to application note. (2) Guaranteed by design, not tested in production. (3) Data based on characterization results, not tested in production. Figure 21: Typical HSI accuracy at VDD = 5 V vs 5 temperatures 79/127 DocID14771 Rev 9 Electrical characteristics STM8S105xx |
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