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STM8S207MBT3B 데이터시트(PDF) 15 Page - STMicroelectronics |
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STM8S207MBT3B 데이터시트(HTML) 15 Page - STMicroelectronics |
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15 / 103 page ![]() STM8S207xx, STM8S208xx Product overview Doc ID 14733 Rev 9 15/103 4.4 Flash program and data EEPROM memory ● Up to 128 Kbytes of high density Flash program single voltage Flash memory ● Up to 2K bytes true data EEPROM ● Read while write: Writing in data memory possible while executing code in program memory. ● User option byte area Write protection (WP) Write protection of Flash program memory and data EEPROM is provided to avoid unintentional overwriting of memory that could result from a user software malfunction. There are two levels of write protection. The first level is known as MASS (memory access security system). MASS is always enabled and protects the main Flash program memory, data EEPROM and option bytes. To perform in-application programming (IAP), this write protection can be removed by writing a MASS key sequence in a control register. This allows the application to write to data EEPROM, modify the contents of main program memory or the device option bytes. A second level of write protection, can be enabled to further protect a specific area of memory known as UBC (user boot code). Refer to Figure 2. The size of the UBC is programmable through the UBC option byte (Table 13.), in increments of 1 page (512 bytes) by programming the UBC option byte in ICP mode. This divides the program memory into two areas: ● Main program memory: Up to 128 Kbytes minus UBC ● User-specific boot code (UBC): Configurable up to 128 Kbytes The UBC area remains write-protected during in-application programming. This means that the MASS keys do not unlock the UBC area. It protects the memory used to store the boot program, specific code libraries, reset and interrupt vectors, the reset routine and usually the IAP and communication routines. Figure 2. Flash memory organisation Programmable area from 1 Kbyte Data UBC area Program memory area Data memory area (2 Kbytes) (2 first pages) up to 128 Kbytes EEPROM Remains write protected during IAP memory 128 Kbytes Flash Up to Write access possible for IAP program memory (1 page steps) Option bytes |
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