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SPC56EC74L7 데이터시트(PDF) 71 Page - STMicroelectronics |
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SPC56EC74L7 데이터시트(HTML) 71 Page - STMicroelectronics |
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71 / 118 page ![]() SPC564Bxx - SPC56ECxx Electrical Characteristics Doc ID 17478 Rev 4 71/118 4.10.2 Flash memory power supply DC characteristics Table 30 shows the flash memory power supply DC characteristics on external supply. Table 29. Flash memory read access timing Symbol C Parameter Conditions(1) Max Unit Code flash memory Data flash memory fREAD CC P Maximum frequency for Flash reading 5 wait states 13 wait states 120 + 2% MHz C 3 wait state 9 wait state 80 + 2% D3 wait states(2) — 64 + 2% C — 7 wait states 1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified. 2. Wait states are subject to change per device characterization. Table 30. Flash memory power supply DC electrical characteristics Symbol Parameter Conditions(1) Value(2) Unit Min Typ Max ICFREAD (3) CC Sum of the current consumption on VDD_HV_A on read access Flash memory module read fCPU = 120 MHz + 2% (4) Code flash memory 33 mA IDFREAD (3) Data flash memory 13 ICFMOD (3) CC Sum of the current consumption on VDD_HV_A (program/erase) Program/Erase on-going while reading flash memory registers fCPU = 120 MHz + 2% (4) Code flash memory 52 mA IDFMOD (3) Data flash memory 13 ICFLPW (3) CC Sum of the current consumption on VDD_HV_A during flash memory low power mode Code flash memory 1.1 mA ICFPWD (3) CC Sum of the current consumption on VDD_HV_A during flash memory power down mode Code flash memory 150 µA IDFPWD (3) Data flash memory 150 1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = –40 to 125 °C, unless otherwise specified. 2. All values need to be confirmed during device validation. 3. Data based on characterization results, not tested in production. 4. fCPU 120 MHz + 2% can be achieved over full temperature 125 °C ambient, 150 °C junction temperature. |
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