STPS20SM60C datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Characteristics

STPS20SM60C

4/11

Doc ID 022015 Rev 1

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 7.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

I (A)

100

120

140

160

1.E-03

1.E-02

1.E-01

1.E+00

δ = 0.5

T = 25 °C

T = 75 °C

T = 125 °C

t(s)

TO-220AB/I PAK/D PAK

100

1.E-03

1.E-02

1.E-01

1.E+00

I (A)

δ = 0.5

T = 25 °C

T = 75 °C

T = 125 °C

TO-220FPAB

Figure 8.

Relative thermal impedance

junction to case versus pulse

duration

Figure 9.

Relative thermal impedance

junction to case versus pulse

duration

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

t (s)

TO-220AB/I PAK/D PAK

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z/R

th(j-c)

Single pulse

t (s)

TO-220FPAB

Figure 10.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 11.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

I (mA)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

2030

4050

V (V)

T = 25 °C

T = 50 °C

T = 75 °C

T = 100 °C

T = 125 °C

T = 150 °C

C(pF)

100

1000

100

V (V)

F = 1 MHz

= 30 mV

T = 25 °C

osc

RMS

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