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S29GL01GP 데이터시트(PDF) 31 Page - SPANSION

부품명 S29GL01GP
상세설명  1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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S29GL01GP 데이터시트(HTML) 31 Page - SPANSION

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October 22, 2012 S29GL-P_00_A14
S29GL-P MirrorBit® Flash Family
31
Data
She e t
Figure 7.3 Sector Erase Operation
Notes
1. See Table 12.1 on page 69 for erase command sequence.
2. See DQ3: Sector Erase Timeout State Indicator on page 39 for information on the sector erase timeout.
No
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Write Sector Erase Cycles:
Address 555h, Data 80h
Address 555h, Data AAh
Address 2AAh, Data 55h
Sector Address, Data 30h
Write Additional
Sector Addresses
FAIL. Write reset command
to return to reading array.
PASS. Device returns
to reading array.
Perform Write Operation
Status Algorithm
Select
Additional
Sectors?
Unlock Cycle 1
Unlock Cycle 2
Yes
Yes
Yes
Yes
Yes
No
No
No
No
Last Sector
Selected?
Done?
DQ5 = 1?
Command Cycle 1
Command Cycle 2
Command Cycle 3
Specify first sector for erasure
Error condition (Exceeded Timing Limits)
Status may be obtained by reading DQ7, DQ6 and/or DQ2.
Poll DQ3.
DQ3 = 1?
• Each additional cycle must be written within tSEA timeout
• The host system may monitor DQ3 or wait tSEA to ensure
acceptance of erase commands
• No limit on number of sectors
• Commands other than Erase Suspend or selecting additional
sectors for erasure during timeout reset device to reading array
data
(see Figure 7.4)



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