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S29GL01GP 데이터시트(PDF) 4 Page - SPANSION |
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S29GL01GP 데이터시트(HTML) 4 Page - SPANSION |
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4 / 81 page ![]() 4 S29GL-P MirrorBit® Flash Family S29GL-P_00_A14 October 22, 2012 Da ta Sh e e t Performance Characteristics Notes 1. Access times are dependent on VCC and VIO operating ranges. See Ordering Information page for further details. Regulated VCC: VCC = 3.0–3.6 V. Full VCC: VCC = VIO = 2.7–3.6 V. VersatileIO VIO: VIO = 1.65–VCC, VCC = 2.7–3.6 V. 2. Contact a sales representative for availability. Maximum Read Access Times (ns) Density Voltage Range (1) Random Access Time (tACC) Page Access Time (tPACC) CE# Access Time (tCE) OE# Access Time (tOE) 128 & 256 Mb Regulated VCC 90 25 90 25 Full VCC 100/110 100/110 VersatileIO VIO 110 110 512 Mb Regulated VCC 100 25 100 25 Full VCC 110 110 VersatileIO VIO 120 120 1 Gb Regulated VCC 110 25 110 25 Full VCC 120 120 VersatileIO VIO 130 130 Current Consumption (typical values) Random Access Read (f = 5 MHz) 30 mA 8-Word Page Read (f = 10 MHz) 1 mA Program/Erase 50 mA Standby 1 µA Program & Erase Times (typical values) Single Word Programming 60 µs Effective Write Buffer Programming (VCC) Per Word 15 µs Effective Write Buffer Programming (VHH) Per Word 13.5 µs Sector Erase Time (64 Kword Sector) 0.5 s |
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