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LM5017MRX_NOPB 데이터시트(PDF) 2 Page - Texas Instruments

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부품명 LM5017MRX_NOPB
상세설명  600mA Constant On-Time Synchronous Buck Regulator
PDF  19 Pages
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제조업체  TI1 [Texas Instruments]
홈페이지  http://www.ti.com
Logo TI1 - Texas Instruments

LM5017MRX_NOPB 데이터시트(HTML) 2 Page - Texas Instruments

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UVLO
3
RON
4
RTN
1
VIN
2
8
SW
7
BST
6
VCC
5
FB
SO
PowerPAD-
8
Exp Pad
SW
BST
VCC
FB
8
7
6
5
1
2
3
4
UVLO
RON
RTN
VIN
WSON-8
Exp Pad
LM5017
SNVS783D – JANUARY 2012 – REVISED MAY 2013
www.ti.com
Connection Diagram
Figure 1. Top View (Connect Exposed Pad to RTN)
Figure 2. Top View (Connect Exposed Pad to RTN)
Pin Descriptions
Pin
Name
Description
Application Information
1
RTN
Ground
Ground connection of the integrated circuit.
2
VIN
Input Voltage
Operating input range is 9V to 100V.
3
UVLO
Input Pin of Undervoltage Comparator
Resistor divider from VIN to UVLO to GND programs the
undervoltage detection threshold. An internal current
source is enabled when UVLO is above 1.225V to
provide hysteresis. When UVLO pin is pulled below
0.66V externally, the parts goes in shutdown mode.
4
RON
On-Time Control
A resistor between this pin and VIN sets the switch on-
time as a function of VIN. Minimum recommended on-
time is 100ns at max input voltage.
5
FB
Feedback
This pin is connected to the inverting input of the internal
regulation comparator. The regulation level is 1.225V.
6
VCC
Output from the Internal High Voltage Series Pass
The internal VCC regulator provides bias supply for the
Regulator. Regulated at 7.6V
gate drivers and other internal circuitry. A 1.0
μF
decoupling capacitor is recommended.
7
BST
Bootstrap Capacitor
An external capacitor is required between the BST and
SW pins (0.01
μF ceramic). The BST pin capacitor is
charged by the VCC regulator through an internal diode
when the SW pin is low.
8
SW
Switching Node
Power switching node. Connect to the output inductor
and bootstrap capacitor.
EP
Exposed Pad
Exposed pad must be connected to RTN pin. Connect to
system ground plane on application board for reduced
thermal resistance.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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Copyright © 2012–2013, Texas Instruments Incorporated
Product Folder Links: LM5017



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