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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ST7FLITE25F2B6 데이터시트(PDF) 24 Page - STMicroelectronics |
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ST7FLITE25F2B6 데이터시트(HTML) 24 Page - STMicroelectronics |
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24 / 166 page  Data EEPROM ST7LITE20F2 ST7LITE25F2 ST7LITE29F2 24/166 Doc ID 8349 Rev 5 5 Data EEPROM 5.1 Introduction The Electrically Erasable Programmable Read Only Memory can be used as a non-volatile backup for storing data. Using the EEPROM requires a basic access protocol described in this chapter. 5.2 Main features ● Up to 32 bytes programmed in the same cycle ● EEPROM mono-voltage (charge pump) ● Chained erase and programming cycles ● Internal control of the global programming cycle duration ● WAIT mode management ● Read-out protection Figure 6. EEPROM block diagram 5.3 Memory access The Data EEPROM memory read/write access modes are controlled by the E2LAT bit of the EEPROM Control/Status register (EECSR). The flowchart in Figure 7 describes these different memory access modes. EECSR High voltage pump 0 E2LAT 0 0 0 0 0 E2PGM EEPROM memory matrix (1 ROW = 32 x 8 BITS) Address decoder Data multiplexer 32 x 8 bits data latches Row decoder DATA BUS 4 4 4 128 128 Address bus |
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