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JS28F256P33BFE 데이터시트(PDF) 68 Page - Micron Technology

부품명 JS28F256P33BFE
상세설명  NumonyxTM StrataFlash Embedded Memory
PDF  90 Pages
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제조업체  MICRON [Micron Technology]
홈페이지  http://www.micron.com
Logo MICRON - Micron Technology

JS28F256P33BFE 데이터시트(HTML) 68 Page - Micron Technology

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P33-65nm
Datasheet
Aug 2009
68
Order Number: 320003-08
Table 37: Partition Region 1 Information (Sheet 1 of 2)
Offset(1)
See table below
P = 10Ah
Description
Address
Bottom
Top
(Optional flash features and commands)
Len
Bot
Top
(P+24)h
(P+24)h Data size of this Parition Region Information field
2
12E:
12E
(P+25)h
(P+25)h (# addressable locations, including this field)
12F
12F
(P+26)h
(P+26)h Number of identical partitions w ithin the partition region
2
130:
130:
(P+27)h
(P+27)h
131:
131:
(P+28)h
(P+28)h
1
132:
132:
(P+29)h
(P+29)h
1
133:
133:
(P+2A)h (P+2A)h
1
134:
134:
(P+2B)h (P+2B)h
1
135:
135:
Types of erase block regions in this Partition Region.
x = 0 = no erase blocking; the Partition Region erases in bulk
x = number of erase block regions w / contiguous same-size
erase blocks. Symmetrically blocked partitions have one
blocking region. Partition size = (Type 1 blocks)x(Type 1
block sizes) + (Type 2 blocks)x(Type 2 block sizes) +…+
(Type n blocks)x(Type n block sizes)
Number of program or erase operations allow ed in a partition
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
Simultaneous program or erase operations allow ed in other partitions w hile a
partition in this region is in Program mode
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
Simultaneous program or erase operations allow ed in other partitions w hile a
partition in this region is in Erase mode
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations



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