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LIS3DSH 데이터시트(PDF) 18 Page - STMicroelectronics |
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LIS3DSH 데이터시트(HTML) 18 Page - STMicroelectronics |
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18 / 53 page ![]() Mechanical and electrical specifications LIS3DSH 18/53 Doc ID 022405 Rev 1 When an acceleration is applied to the sensor the proof mass displaces from its nominal position, causing an imbalance in the capacitive half bridge. This imbalance is measured using charge integration in response to a voltage pulse applied to the capacitor. At steady-state the nominal value of the capacitors are a few pF and when an acceleration is applied, the maximum variation of the capacitive load is in the fF range. 3.8 IC interface The complete measurement chain is made up of a low-noise capacitive amplifier which converts the capacitive unbalancing of the MEMS sensor into an analog voltage that is finally available to the user through an analog-to-digital converter. The acceleration data may be accessed through an I2C/SPI interface, therefore making the device particularly suitable for direct interfacing with a microcontroller. The LIS3DSH features a Data-Ready signal (RDY) which indicates when a new set of measured acceleration data is available, therefore simplifying data synchronization in the digital system that uses the device. 3.9 Factory calibration The IC interface is factory calibrated for sensitivity (So) and Zero- g level (TyOff). The trimming values are stored inside the device in a non volatile memory. Any time the device is turned on, the trimming parameters are downloaded into the registers to be used during the active operation. This allows to use the device without further calibration. |
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