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STB50N25M5 데이터시트(PDF) 1 Page - STMicroelectronics |
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STB50N25M5 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() This is information on a product in full production. March 2012 Doc ID 15923 Rev 3 1/14 14 STB50N25M5 N-channel 250 V, 0.065 Ω, 28 A, MDmesh™ V Power MOSFET in D²PAK package Datasheet — production data Features ■ Amongst the best RDS(on)* area ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested Application ■ Switching applications Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STB50N25M5 250 V < 0.075 Ω 28 A 1 3 D²PAK TAB Table 1. Device summary Order code Marking Package Packaging STB50N25M5 50N25M5 D²PAK Tape and reel www.st.com |
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