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STB50N25M5 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STB50N25M5
상세설명  N-channel 250 V, 0.065 Ω, 28 A, MDmesh V Power MOSFET in DPAK package
PDF  14 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STB50N25M5 데이터시트(HTML) 5 Page - STMicroelectronics

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STB50N25M5
Electrical characteristics
Doc ID 15923 Rev 3
5/14
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 125 V, ID = 14 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14)
-
16
44
35
20
-
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
28
112
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 28 A, VGS = 0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 28 A, di/dt = 100 A/µs
VDD= 60 V, TJ = 25 °C
(see Figure 16)
-
174
1.5
18
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 28 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 16)
-
195
2
20
ns
µC
A



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