STB50N25M5 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STB50N25M5

4/14

Doc ID 15923 Rev 3

Electrical characteristics

(Tcase =25°C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

250

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 250 V

VDS = 250 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 14 A

0.065

0.075

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

1700

100

Co(er)

(1)

Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0

to 80% VDSS

Equivalent output

capacitance energy

VGS = 0, VDS = 0 to 80%

V(BR)DSS

-89

Co(tr)

(2)

Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0

to 80% VDSS

Equivalent output

capacitance time

VGS = 0, VDS = 0 to 80%

V(BR)DSS

-171

Gate input resistance

f=1 MHz open drain

1.8

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 200 V, ID = 28 A,

VGS = 10 V

(see Figure 15)

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