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W25Q32FVZPIP 데이터시트(PDF) 86 Page - Winbond

부품명 W25Q32FVZPIP
상세설명  3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
PDF  99 Pages
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제조업체  WINBOND [Winbond]
홈페이지  http://www.winbond.com
Logo WINBOND - Winbond

W25Q32FVZPIP 데이터시트(HTML) 86 Page - Winbond

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W25Q32FV
- 85 -
AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL
ALT
SPEC
UNIT
MIN
TYP
MAX
/HOLD to Output Low-Z
tHHQX(2)
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ(2)
tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL(3)
20
ns
Write Protect Hold Time After /CS High
tSHWL(3)
100
ns
/CS High to Power-down Mode
tDP(2)
3
µs
/CS High to Standby Mode without ID Read
tRES1(2)
3
µs
/CS High to Standby Mode with ID Read
tRES2(2)
1.8
µs
/CS High to next Instruction after Suspend
tSUS(2)
20
µs
/CS High to next Instruction after Reset
tSUS(2)
30
µs
/RESET pin Low period to reset the device
tRST(2)
(5)
1
µs
Write Status Register Time
tW
10
15
ms
Byte Program Time (First Byte)
tBP1(4)
30
50
µs
Additional Byte Program Time (After First Byte)
tBP2(4)
2.5
12
µs
Page Program Time
tPP
0.7
3
ms
Sector Erase Time (4KB)
W25Q32FVxxIG
W25Q32FVxxIP
tSE
100
400
ms
W25Q32FVxxIQ
W25Q32FVxxIF
45
Block Erase Time (32KB)
tBE1
120
1,600
ms
Block Erase Time (64KB)
tBE2
150
2,000
ms
Chip Erase Time
tCE
10
50
s
Notes:
1.Clock high + Clock low must be less than or equal to 1/fC.
2.Value guaranteed by design and/or characterization, not 100% tested in production.
3.Only applicable as a constraint for a Write Status Register instruction when SRP[1:0]=(0,1).
4.For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N = number
of bytes programmed.
5.It’s possible to reset the device with shorter tRESET (as short as a few hundred ns), a 1us minimum is recommended to ensure
reliable operation.
6.4-bytes address alignment for QPI/Quad Read



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