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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM8L151F3P6 데이터시트(PDF) 56 Page - STMicroelectronics |
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STM8L151F3P6 데이터시트(HTML) 56 Page - STMicroelectronics |
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56 / 112 page  Electrical parameters STM8L151x2, STM8L151x3 56/112 Doc ID 018780 Rev 4 Figure 12. Typ. IDD(RUN) vs. VDD,fCPU = 16 MHz 1. Typical current consumption measured with code executed from RAM 4. The run from RAM consumption can be approximated with the linear formula: IDD(run_from_RAM) = Freq * 90 µA/MHz + 380 µA 5. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption (IDD HSE) must be added. Refer to Table 27. 6. Tested in production. 7. The run from Flash consumption can be approximated with the linear formula: IDD(run_from_Flash) = Freq * 195 µA/MHz + 440 µA 8. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 28. 1.50 1.75 2.00 2.25 2.50 2.75 3.00 1.6 2.1 2.6 3.1 3.6 VDD [V] -40°C 25°C 90°C 130°C ai18213 |
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