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STM8L151F3P6 데이터시트(PDF) 95 Page - STMicroelectronics

부품명 STM8L151F3P6
상세설명  8-bit ultralow power MCU, up to 8 KB Flash, up to 256 B data EEPROM, RTC, timers, USART, I2C, SPI, ADC, comparators
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM8L151F3P6 데이터시트(HTML) 95 Page - STMicroelectronics

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STM8L151x2, STM8L151x3
Electrical parameters
Doc ID 018780 Rev 4
95/112
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: human body model and charge device model. This test conforms to the
JESD22-A114A/A115A standard.
Static latch-up
●
LU: 3 complementary static tests are required on 6 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to the application note AN1181.
Table 52.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Maximum
value (1)
1.
Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA = +25 °C
2000
V
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
500
Table 53.
Electrical sensitivities
Symbol
Parameter
Class
LU
Static latch-up class
II



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