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STM8L151F3P6 데이터시트(PDF) 93 Page - STMicroelectronics

부품명 STM8L151F3P6
상세설명  8-bit ultralow power MCU, up to 8 KB Flash, up to 256 B data EEPROM, RTC, timers, USART, I2C, SPI, ADC, comparators
PDF  112 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM8L151F3P6 데이터시트(HTML) 93 Page - STMicroelectronics

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STM8L151x2, STM8L151x3
Electrical parameters
Doc ID 018780 Rev 4
93/112
Figure 41.
Max. dynamic current consumption on VREF+ supply pin during ADC
conversion
7.3.13
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
●
ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 61000 standard.
●
FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 61000 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
ADC clock
Sampling
(n cycles)
Conversion (12 cycles)
Iref+
300μA
700μA
MS18181V1
Table 49.
RAIN max for fADC = 16 MHz
tS
(cycles)
tS
(µs)
RAIN max (kohm)
Slow channels
Fast channels
2.4 V < VDDA < 3.6 V 1.8 V < VDDA < 2.4 V 2.4 V < VDDA < 3.3 V 1.8 V < VDDA < 2.4 V
4
0.25
Not allowed
Not allowed
0.7
Not allowed
9
0.5625
0.8
Not allowed
2.0
1.0
16
1
2.0
0.8
4.0
3.0
24
1.5
3.0
1.8
6.0
4.5
48
3
6.8
4.0
15.0
10.0
96
6
15.0
10.0
30.0
20.0
192
12
32.0
25.0
50.0
40.0
384
24
50.0
50.0
50.0
50.0



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